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    • 282nm 10mW Deep UV LED Laser Diode

    A semiconductor deep ultraviolet laser diode emitting at 282nm. This product represents a major breakthrough in UV light source technology, extending the advantages of efficient, compact, and low-power semiconductor laser technology into the deep UV band traditionally dominated by gas lasers (e.g., He-Cd lasers) or solid-state frequency-doubled laser systems. The 282nm wavelength lies within the UVC spectral range, possessing unique physical and chemical effects, making it an ideal light source for biomedicine, high-precision analysis, and advanced manufacturing.

    Product features：Package: 5.6mm floating mount; Transverse multimode output; Optical output power: 10mW

    Part Number：MP-UV-282-10-TO56

    Application area：Biomedicine & Life Sciences | Analytical Chemistry & Sensing | Industrial & Materials Processing

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    Main parameters
  • Core parameters

  • Peak Wavelength

    282nm

  • Dimension Drawing
    • General Parameters

    Parameter

    Parameter

    Condition

    Symbol

    Min*

    Typical

    Max*

    Unit

    Peak Wavelength

    Po=10mW

    λp


    282


    nm

    Threshold Current

    Pulse[1]

    Ith


    55


    mA

    Working Current

    Po=10mW

    Iop


    70


    mA

    Slope Efficiency

    Pulse[1]

    η


    1


    W/A

    Operating Voltage

    Po=10mW

    Vop


    9


    V

    Beam Divergence Angle[2]

    Parallel

    Po=10mW

    θ//


    15


    °

    Perpendicular

    Po=10mW

    θ⊥


    55


    °

    *Not yet finalized (under development)

    [1] Recommended pulse drive conditions: pulse width 50 µs, duty cycle 1% (200 Hz)

    [2] Full angle at 1/e² of peak intensity

     

    Absolute Maximum Ratings

    Parameter

    Symbol

    Absolute Maximum

    Unit

    Optical Output Power

    PO

    15

    mW

    Allowable Forward Current

    IF

    120

    mA

    Storage Temperature

    TST

    20-40

    ℃

    Operating Case Temperature

    TC

    20-30

    ℃

     

    Driving Cricuit

    1.1.png 


    Graphical Data

    Drive conditions: pulse width 50 µs, duty cycle 1% (200 Hz)

     

             


     

    Appendix Data

    1.6.png 

    The figure shows the variation of Iop when the automatic power control is set to Po = 10mW under pulsed drive conditions (50 µs pulse width, 1% duty cycle). More significant Iop drift may be observed during the initial 2-3 hours.


    Optional Configurations

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    Downloads

    282nm 10mW Deep UV LED Laser Diode.pdf

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  • Product title: 282nm 10mW Deep UV LED Laser Diode
  • Product link: https://www.idealphotonics.com/product/detail/1419.html

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      • Other Requirements:

    • 10+ 10 Years of Experience
    • 50 50 + Countries Bussiness
    • 10000 10k + Diodes sold worldwide
    • 30 30+ Invention patent
    • 10 10+ Advanced Optical Solutions

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