200-1100nm Silicon-Based Amplified Photodetector, Active area Φ1.0mm

200-1100nm Silicon-Based Amplified Photodetector, Active area Φ1.0mm

IdealPhotonics’ silicon-based amplified photodetector covers a wavelength range from 200nm to 1100nm, offering fixed gain for quantitative photoconversion. It provides sufficient gain while ensuring high bandwidth performance, making it ideal for photodetection applications with weak light intensity and fast speeds. The device is known for its excellent performance, high cost-performance ratio, and comprehensive technical support. It is commonly used in ultraviolet and visible light measurements.

Product features：Wavelength range: 200nm–1100nm, commonly used for ultraviolet and visible light measurements、 Amplified detector with fixed gain for quantitative photoconversion、 Provides sufficient gain and high bandwidth, ideal for weak light and fast-speed applications、 Excellent performance and cost-effective, with full technical support、 Customization options available

Part Number：MP-PD-M-S-150-AF2B10

Application area：Ultraviolet and visible light measurements

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Main parameters
General Parameters
Optional Configurations
Downloads

Main parameters

Core parameters

Wavelength Range Active Area Bandwidth

200-1100nm Φ1mm 150MHz

Dimension Drawing

General Parameters

Main Parameters

Parameter	Value
Wavelength Range	200-1100nm	400-1000nm	320-1100nm	320-1000nm
Photodetector Size	Φ1.0mm	Φ150um	1.1mm×1.1mm	Φ0.8mm
Bandwidth Range	DC ～150MHz	DC～380MHz	DC～20MHz	DC～50MHz
Gain Range	Hi-Z Load: 1 × 10⁴V/A; 50Ω Load: 5 × 10³V/A	Hi-Z Load: 5 × 10⁴V/A; 50Ω Load: 2.5 × 10⁴V/A	1 × 10¹²V/A±1 0%	Hi-Z Load: 100kV/A; 50Ω Load: 50kV/A
Signal Amplitude	Hi-Z Load: 0 ～10V; 50Ω Load: 0～5V	Hi-Z Load: 0 ～10V; 50Ω Load: 0～5V	0 ～10V	Hi-Z Load: 0～3.6V; 50Ω Load: 0～1.8V
NEP	2.92× 10^-11W/Hz^1/2	3.6 × 10^-11W/Hz^1/2	3.0 × 10^-15W/H z^1/2	7.8 × 10^-12W/Hz^1/2
Photodetector Depth	0.09" (2.2 mm)	0.20" (5.0 mm)	0.10" (2.4 mm)	0.07" (1.8 mm)
Operating Temperature	10-50℃	10-40℃	10-50℃
Storage Temperature	-25-70℃
Detector Net Weight	0.10kg			0.06kg
Dimensions	2.79" X 1.96" X 0.89" (70.9 mm X 49.8 m m X 22.5 mm)		2.79" X 1.96" X 0.89" (70.9 mm X 49.9 mm X 22.5 mm)
Power Supply Interface	Power Source	Power Switch	Signal Interface	Mounting Interface	Optical Interface
LUMBERG R SMV3 FEMA LE	LDS12B(DP), ±12VDC Regulated Linear Power Supply, 6W, 220VAC	Sliding Switch with LED indicator	BNC Female Socket	M4 X 2	SM1 X 1 SM0.5 X 1

SI Response Curve:

QQ图片20260309114410.png

Attachment 1: Optional Configuration Table

Silicon-Based Amplified Photodetector	Optional Configuration
Product Name	Material	Type	Features	Wavelength Range Photodetector Size	Reserved Optional Configuration
Photodetector	Si (Silicon-based)	Amplified	Fixed Gain	200-1100nm ，Φ1.0mm
				400-1000nm ，Φ150u m
				320-1100nm ，1.1mmX1.1 mm
				320-1000nm ，Φ0.8mm

Attachment 2: Model Comparison Table

Model	Specs
MP-PD-M-S-150-AF2B10	200-1100nm Silicon-based Amplified Photodetector, Photodetector Size Φ 1.0mm, Fixed Gain 1 × 10⁴ V/A, Bandwidth Range DC ~ 150MHz
MP-PD-M-S-380-AF4F015	400-1000nm Silicon-based Amplified Photodetector, Photodetector Size Φ 150µm, Fixed Gain 5 × 10⁴ V/A, Bandwidth Range DC ~ 380MHz
MP-PD-M-S-20-AF3D11	320-1100nm Silicon-based Amplified Photodetector, Photodetector Size 1.1mm × 1.1mm, Fixed Gain 1 × 10¹² V/A ± 10%, Bandwidth Range DC ~ 20MHz
MP-PD-M-S-50-AF3C8	320-1000nm Silicon-based Amplified Photodetector, Photodetector Size Φ 0.8mm, Fixed Gain 100kV/A, Bandwidth Range DC ~ 50MHz

Optional Configurations

Downloads

200-1100nm Silicon-Based Amplified Photodetector, Active area Φ1.0mm.pdf

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