1105nm 350mW TypeA Gain Chip (TO Package)

A type A (straight stripe) gain chip with TO packaging, designed specifically for external cavity semiconductor lasers. The chip is coated with high reflectivity (HR) and anti reflectivity (AR) coatings on both end faces, and must rely on external frequency selective elements (such as diffraction gratings) to generate laser light, thereby achieving a wide tuning range and high edge mode suppression ratio.

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1105nm 200mW TypeB Gain Chip (TO Package)

A B-type (curved stripe) gain chip packaged in TO, specifically designed for external cavity semiconductor lasers. The chip is coated with a deep anti reflection (AR) coating on both end faces and relies on external frequency selective elements (such as diffraction gratings) to generate laser, thereby achieving a wide tuning range and high edge mode suppression ratio.

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1060nm 210mW TypeB Gain Chip (TO Package)

A B-type (curved stripe) gain chip with TO packaging, with a center wavelength of 1060nm, designed specifically for external cavity semiconductor lasers. The chip is coated with a deep anti reflection (AR) coating on both end faces and relies on external frequency selective elements (such as diffraction gratings) to generate laser, thereby achieving a wide tuning range and high edge mode suppression ratio.

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1030nm 110mW TypeB Gain Chip (TO Package)

A B-type (curved stripe) gain chip with TO packaging, with a center wavelength of 1030nm, designed specifically for external cavity semiconductor lasers. The chip is coated with a deep anti reflection (AR) coating on both end faces and relies on external frequency selective elements (such as diffraction gratings) to generate laser, thereby achieving a wide tuning range and high edge mode suppression ratio.

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950nm 200mW TypeB Gain Chip (TO Package)

A B-type (bent stripe) gain chip with TO packaging, featuring a central wavelength of 950nm, is specifically designed for external cavity semiconductor lasers. The chip is coated with deep anti-reflection (AR) layers on both end facets and requires external frequency-selecting components (such as diffraction gratings) to generate laser output, enabling wide tuning range and high side-mode suppression ratio. The B-type bent stripe design effectively suppresses gain ripple, ensuring mode-hop-free tuning and suitability for applications demanding high spectral purity.

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905nm 200mW TypeB Gain Chip (TO Package)

A Type B (wavy grating) gain chip with TO packaging, featuring a central wavelength of 905nm, is specifically designed for external cavity semiconductor lasers. The chip is coated with deep anti-reflection (AR) layers on both end faces and requires external frequency-selective elements (such as diffraction gratings) to generate laser output, enabling wide tuning ranges and high side-mode suppression ratios. The Type B wavy grating design effectively suppresses gain ripple, ensuring smooth mode-free tuning and making it suitable for applications demanding high spectral purity。

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1530-1557nm Semiconductor Optical Amplifier

Semiconductor Optical Amplifier (SOA) is a PN junction device with a quantum well structure. Under external forward bias, population inversion is achieved, which induces stimulated radiation via optical signals to realize optical signal amplification.SOA features low cost, compact size and easy integration. In the era of new infrastructure, it is widely applied in access networks, metropolitan network edges and optical fiber sensing fields.

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1550nm C-band 14dBm Semiconductor Optical Amplifier(Nonlinear)

1550nm SOA is a polarization-insensitive optical amplifier. Adopting advanced epitaxial wafer growth and optoelectronic packaging technology, it achieves high saturated output power, low noise figure and high gain over a broad spectral bandwidth.

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1300nm Booster Optical Amplifier on Submount

A high-power boost optical amplifier (BOA) with a center wavelength of 1300nm and packaged in a chip on carrier (CoC). This product belongs to the MP series carrier integrated optical amplifier, designed specifically for application scenarios that require high gain, low noise, and compact integration.

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1290nm Booster Optical Amplifier on Submount

A high-power boost optical amplifier (BOA) with a center wavelength of 1290nm and packaged in a chip on carrier (CoC) form. This product adopts InAs/GaAs quantum dot gain material and proprietary anti reflection coating technology, and can achieve an output power of up to 550mW in a submount package form, which is currently the highest power package version among BOA products in this band.

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1310nm 24dBm BOA Fiber-Coupled Booster Semiconductor Optical Amplifier

Semiconductor Optical Amplifier (SOA) / Booster Optical Amplifier (BOA)Booster Optical Amplifiers (BOA) are amplifiers that employ semiconductors as the gain medium. They feature a structure similar to Fabry-Pérot laser diodes, with anti-reflection design structures on the end facets. Modern designs adopt anti-reflection coatings, tilted waveguides and window regions, which can reduce facet reflectivity to below 0.001%. This results in higher cavity power loss than gain, preventing the amplifier from lasing.

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1310nm 20dBm BOA Fiber-Coupled Booster Semiconductor Optical Amplifier

A high-power fiber coupled booster optical amplifier designed specifically for O-band (1260-1360nm) applications with a center wavelength of 1310nm. This product adopts advanced quantum dot gain materials and proprietary anti reflection coating technology, which can provide a saturated output power of up to 20dBm (typical value), and has a wide gain bandwidth of 70nm, suitable for various application scenarios that require high-power, broadband optical signal amplification.

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