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1310nm 350mW PM FP laser diode with FBG
We offer a comprehensive product portfolio of high-power, spatially single-mode laser diodes covering the wavelength range of 780–1340 nm. These devices are available in either a 9-mm TO-can package with free-space optical coupling or a 14-pin butterfly package compliant with single-mode (SM) or polarization-maintaining (PM) fiber optic standards.
1320nm 3W High-Power Broad-Area Laser Diode
Proprietary mirror coating technology, high reliability, reliable Au/Sn bonding between the chip and composite submount, RoHS compliant.
1320nm 2W High-Power Broad-Area Laser Diode
Proprietary mirror coating technology, high reliability, reliable Au/Sn bonding between the chip and composite submount, RoHS compliant.
1310nm 5W High-Power Broad-Area Laser Diode
Proprietary mirror coating technology, high reliability, reliable Au/Sn bonding between the chip and composite submount, RoHS compliant.
1290nm 9W High-Power Broad-Area Laser Diode
Proprietary mirror coating technology, high reliability, reliable Au/Sn bonding between the chip and composite submount, RoHS compliant.
1320nm 3W Broad-Area Laser Diode
Broad-area lasers, through optimized emission area design, deliver high-power, high-efficiency, low-thermal-load laser output, and are widely used in industrial, medical, scientific research, communications and other fields. Its advantages lie in excellent thermal management, low energy loss and superior beam quality, making it suitable for high-power requirements and precision applications.
1320nm 2W Broad-Area Laser Diode
Broad-area lasers, through optimized emission area design, deliver high-power, high-efficiency, low-thermal-load laser output, and are widely used in industrial, medical, scientific research, communications and other fields. Its advantages lie in excellent thermal management, low energy loss and superior beam quality, making it suitable for high-power requirements and precision applications.
1290nm 9W Broad-Area Laser Diode
Broad-area lasers, through optimized emission area design, deliver high-power, high-efficiency, low-thermal-load laser output, and are widely used in industrial, medical, scientific research, communications and other fields. Its advantages lie in excellent thermal management, low energy loss and superior beam quality, making it suitable for high-power requirements and precision applications.
1485nm 500mW PM FP laser diode with FBG
This series are 1.4μm band pump laser modules developed for fiber Raman amplifiers. With an output power of up to 500mW, they feature polarization-maintaining fiber output, 14-pin butterfly package, and integrate built-in TEC, PD, and thermistor.
1480nm 500mW PM FP laser diode with FBG
The 1480nm laser is designed for optical amplifier systems, such as fiber Raman amplifiers used in optical transmission systems, and can also be used in DWDM systems. The laser diode chip is packaged in an industry-standard 14-pin butterfly package, with built-in TEC, thermistor, and PIN photodiode. A dual-lens system efficiently couples the circular beam from the laser chip into the optical fiber, achieving an output power of up to 500mW.
1480nm 300mW SM FP laser diode without FBG
The 1480nm laser is designed for optical amplifier systems, such as fiber Raman amplifiers used in optical transmission systems, and can also be used in DWDM systems. The laser diode chip is packaged in an industry-standard 14-pin butterfly package, with built-in TEC, thermistor, and PIN photodiode. A dual-lens system efficiently couples the circular beam from the laser chip into the optical fiber, achieving an output power of up to 320mW.
1480nm 300mW PM FP laser diode without FBG
The 1480nm laser is designed for optical amplifier systems, such as fiber Raman amplifiers used in optical transmission systems, and can also be used in DWDM systems. The laser diode chip is packaged in an industry-standard 14-pin butterfly package, with built-in TEC, thermistor, and PIN photodiode. A dual-lens system efficiently couples the circular beam from the laser chip into the optical fiber, achieving an output power of up to 320mW.
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