筱晓光子

All Categories

Home >

Si photodiode

Silicon Si avalanche photodiode 400-1100nm

Si silicon avalanche photodiode, with a spectral response range from visible light to near-infrared, and a peak response wavelength of 905nm. Large light sensitive surface, high-speed response, high gain, low noise.

Product PN#	product name	Spectral response	Photographic specifications	Other parameters

Silicon Si PIN photodiode (TO package) 400-1100nm

The device is a silicon PIN photodiode that operates under reverse bias conditions. The peak wavelength is around 940nm, and the spectral detection range is from 400nm to 1100nm.

Product PN#	product name	Response band	Response speed	Other parameters

Silicon Si photodiode detector amplifier Photop ™ Hybrid packaging series 200-1100nm

Silicon Si Photop ™ Series, combining photodiodes and operational amplifiers in the same package. Photops ™ The spectral range of a universal detector is 350nm to 1100nm or 200nm to 1100nm. They adopt integrated packaging to ensure low-noise output under various working conditions. These operational amplifiers were specifically selected by OSI optoelectronic engineers to be compatible with our photodiodes. Many of these specific parameters include low noise, low drift, and the ability to have gain and bandwidth determined by external feedback components. It is possible to operate from DC level to several megahertz, either using unbiased configuration in low-speed, low drift applications or biased configuration in faster response times.

Product PN#	product name	Spectral response	responsivity	Other parameters