Product ImageProduct NameItem NumberWavelengthActive AreaBandwidthInput CouplingOperation

400-1100nm High-speed silicon-based biased photodetector, Active Area Φ250μm, rise time 1ns MP-CPD-M-S-B-H-4G025-1-F 400-1100nmΦ250um1GHzFC/PC Add to List

400-1100nm High-speed Silicon-based Bias Photodetector, Active Area Φ250um, Rise Time 150ps MP-CPD-M-S-B-H-4G025-2-F 400-1100nmΦ250um2GHzFC/PC Add to List

400-1100nm High-speed Silicon-based Bias Photodetector Sensitive Area Φ250um, Rise Time 150ps, Bandwidth 2GHz Input Coupling Method: Window piece MP-CPD-M-S-B-H-4G025-2-W 400-1100nmΦ250um2GHzWindow piece Add to List

400-1100nm High-speed Silicon-based Bias Photodetector, Input Coupling Method: Ball lens MP-CPD-M-S-B-H-4G025-2-L 400-1100nmΦ250um2GHzBall lens Add to List