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QPD-3000I InGaAs Quadrant PIN Detector
Category: InGaAs detector  Publish Time: 2017-10-25 15:10 

QPD-3000I InGaAs Quadrant PIN Detector
Price : $0.00
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Quantity :
 Part NO. : QPD-1000I
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QPD-3000I InGaAs Quadrant PIN Detector



Description

InGaAs Quadrant PIN Detector, high sensitivity photo-diode for use in infrared instrumentation and sensing applications. High spectral response in the region 800 nm to 1700 nm. Large photosensitive area is 3mmX4 in diameter. Planar-passivated device structure.


Key Features

● Top illumination planar PD
● Narrow Element gap,
● Low Crosstalk,High reliability
● Good Reponsivity homogeneity of each Quadrant


Absolute Maximum Ratings (T=25°C)

Operating voltage

15V

Operating temperature

-50~+100℃

Power dissipation

100mW

Forward current

10mA

storage temperature

-55~+125℃

Soldering temperature(time)

260℃10s


Optical & Electrical Characteristics(T=25°C)

Parameters

Sym

Test conditions

Min

Typ

Max

Unit

Response Spectrum

λ

1000~1700

nm

Active diameter

φ

3000X4

μm

Element Gap

 

32

μm

Reponsivity

Re

VR=9V,λ=1.55μm,φe=10μW

0.9

 

 

 

A/W

VR=9V,λ=0.90μmφe=10μW

0.3

 

 

Max linear power

Φs

VR =9V, RL=50Ω

10

 

 

mW

Crosstalk

SL

VR =9V

 

 

2%

 

Response time

ts

VR=9V RL=50Ω

 

1.0

2.0

ns

Dark current

ID

VR=9V

 

 

5.0

nA

Reverse breakdown voltage

VBR

IR=10μA

30

 

 

V

-3dB bandwidth

BW

VR=9V,λ=1.55μmRL=50Ω

100

 

 

MHZ

Time On

Ton

VR=9V,λ=1.55μmRL=50Ω

 

 

5

ns

Time Off

Toff

VR=9V,λ=1.55μmRL=50Ω

 

 

5

ns

Operating voltage temperature
coefficient

δ

Tc=-40+85℃

 

0.10

0.15

V/℃

Shunt impedance

Rsh

VR=10mV

75

 

 

Ununiformity among quadrants

δRe’

VR=9V,λ=1.55μm,φe=10μW

 

 

2%

 

Ununiformity in quadrant

δRe

VR=9V,λ=1.55μm,φe=10μW

 

 

2%

 


TYPICAL CHARACTERISTICS


DIMENSIONAL OUTLINE



The package and lead 
— This detector need feedback of voltage temperature when operating.
—The suitable ESD protecting mersures are recommend in storage,transporting and using. 



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