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| Part NO. : | QAD-1000L |
| Datasheet : |
|
| Availability : | In store |
QAD-1000L InGaAs Quadrant APD Detector
DESCRIPTION
nGaAs Quadrant APD Detector, high sensitivity photo-diode for use in infrared instrumentation and sensing applications. High spectral response in the region 800 nm to 1700 nm. The photosensitive area is 1mm in diameter. Planar-passivated device structure.
Applications● Laser guidance
● Laser positioning
● Laser navigation
● Laser range finder
Features
● Top illumination planar APD
● Narrow Element gap,
● Low Crosstalk,
● Good Reponsivity homogeneity of each Quadrant
Operating voltage
0.99×VBR
Operating temperature
-50~+85℃
Power dissipation
100mW
Forward current
10mA
storage temperature
-55~+100℃
Soldering temperature(time)
260℃（10s）
OPTICAL AND ELECTRICAL CHARACTERISTICS (T=25°C)
Parameters
Sym
Test conditions
Min
Yyp
Max
Unit
Response Spectrum
λ
—
1000~1700
nm
Active diameter
φ
—
1000
μm
Element Gap
—
100
μm
Reponsivity
Re
λ=1.55µm,φe=1µw, M=10
9.0
9.5
A/W
Maximum multiplication gain
M
20
Crosstalk
SL
M=10
10%
Response time
ts
f=1MHz,RL=50Ω
1.5
3.0
ns
Dark current
ID
M=10
25
100
nA
Reverse breakdown voltage
VCC
IR=100uA
60
V
Capacitance
12
15
pF
Operating voltage temperature
δ
Tc=-40～+85℃
0.10
0.15
V/℃
TYPICAL CHARACTERISTICS
coefficient
DIMENSIONAL OUTLINE
Electric circuit
The package and lead
— This detector need feedback of voltage temperature when operating.
— The suitable ESD protecting mersures are recommend in storage,transporting and using.
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