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Fast Si PIN photo diode IP-Si 106. IP-Si 106-A
Category: Silicon detector  Publish Time: 2014-07-09 18:27 

Fast Si PIN photo diode IP-Si 106. IP-Si 106-A
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 Part NO. :  DCFBG-series
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Fast Si PIN photo diode IP-Si 106. IP-Si 106-A

Characteristics
Large Sensitive Area
Low Dark Current
High Responsivity
High Reliability
Applications
Distance measurement
0.4-1.1μm Transient Process
Fast Physical and Chemical Process Optical detection
Light Detection, YAG Pulse Power measurement, and Fiber Optical Communication Detection 
Mechanism
The device is a compound Si-PIN structure. To reach high response, back side hole etching process is used for thinner I layer, when carrier go through the floating area, optical current will appear .Slow optical carrieIP are shorted for fast response purpose.
Technical Parameter(TA=23℃)

Note:
ReveIPe Bias;No Vibration and shock when device operating;Static Charge Protection (Storage, Operating) ; Clean the fiber tip with degrease cotton and ethanol .

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