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785nm Laser Diode
Category: DBR  Publish Time: 2014-06-22 17:57 

785nm Laser Diode
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785nm Laser Diode

Description
The IDP785DBR Series of high-power edge-emitting lasers are based on Idealphotonics’s advanced single-frequency laser technology. It provides a diffraction limited, single lateral and longitudinal mode beam. Facets are passivated for high-power reliability. Applications for the 785 nm laser diode include Raman spectroscopy and optical storage.
Feathure
Available in several package styles
Pulsed operation for spectral stability at short pulse lengths
High power for CW applications
High Slope Efficiency
Technology
DBR Single-Frequency Laser Chip
AlGaAs QW Active Layer
Epi designed for high reliability
Specification
Absolute Maximum Rating

Parameter

Symbol

Unit

Min

Max

Storage Temperature

TSTG

°C

0

80

Operating  Temperature

TOP

°C

5.0

70

CW Laser Forward Current, T=25°C

IF

mA

-

150**

Pulsed Laser Forward Current, T=25°C,

IF

A

-

0.3

PW=300 ns, DC=10%

Laser Reverse Voltage

VR

V

-

0.0

Photodiode Forward Current 1/

IP

mA

-

5.0

Photodiode Reverse Voltage  1/

VR

V

-

20.0

Photodiode Dark Current, VR=10V, LD IF=0, 1/

ID

nA

-

50

TEC Current 1/

ITEC

A

-2.0

2.0

TEC Voltage 1/

VTEC

V

-6.0

6.0

Thermistor Current 1/

ITHRM

mA

-

1.0

Thermistor Voltage 1/

VTHRM

V

-

10

External Back Reflection

-

dB

-

-14

Lead Soldering Temperature, 10 sec. Max.

-

°C

-

260

**1/ Butterfly package 2/ TO8 package
**Do not exceed drive current or operating power of supplied LIV 

CW Characteristics at TC =25°C unless otherwise specified

Parameter

Symbol

Unit

Min

Typ

Max

Center Wavelength @ 150mA

λc

nm

783

785

787

Optical Output Power @ 150mA

Po

mW

See Power Options Call-out

Slope Efficiency, 1/

ηd

W/A

0.3

0.36

 

Slope Efficiency

ηd

W/A

0.6

0.75

-

Threshold Current

Ith

mA

-

50

70

Laser Series Resistance

RS

Ω

-

2.0

2.5

Laser Forward Voltage @ 150mA

VF

V

-

2.0

2.5

Thermistor Resistance @25°C, 2/

RT

-

10

-

Photodiode Dark Current, VR=10V, LD IF=0, 2/

ID

nA

-

-

50

Laser Line Width @ 150mA

∆v

MHz

-

3

10

Polarization Extinction Ratio, 1/

PER

dB

-16

-19

-

Beam Divergence @ FWHM

θװ X θ

º

-

6 X 32

8 X 34

Side Mode Suppression Ratio

SMSR

dB

-30

-

-

Laser Polarization

 

 

 

TE

 

Mode Structure

 

 

Fundamental Mode

1/ Butterfly package  2/ TO-8 package
Handling Precautions
These devices are sensitive to ESD. When handling the module, grounded work area and wrist strap must be used. Always store in an antistatic container with all leads shorted together.
Package

TO8

Butterfly


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